AOT9N50/aotf9n50 500v, 9a n-channel mosfet v ds i d (at v gs =10v) 9a r ds(on) (at v gs =10v) < 0.85 w symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. 0.65 -- units c/w 65 0.5 65 3.25 junction and storage temperature range maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 1.5 0.3 avalanche current c 154 single plused avalanche energy g 307 3.2 repetitive avalanche energy c v 30 gate-source voltage t c =100c a 30 pulsed drain current c continuous drain current t c =25c 9 the AOT9N50 & aotf9n50 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted AOT9N50 aotf9n50 600v@150 drain-source voltage 500 i d 5 38.5 192 6.0 9* 6* maximum case-to-sink a maximum junction-to-case mj c/w c/w derate above 25 o c parameter AOT9N50 aotf9n50 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds a w w/ o c c mj v/ns c g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units 500 600 bv dss / ? tj 0.56 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.66 0.85 w g fs 10 s v sd 0.74 1 v i s maximum body-diode continuous current 9 a i sm 30 a c iss 694 868 1042 pf c oss 74 93 112 pf c rss 6.2 7.8 9.4 pf r g 2 4 6 w q g 15 23.6 28 nc q gs 4 5.2 6.2 nc q gd 8.5 10.6 12.7 nc t d(on) 19.5 ns t r 47 ns t d(off) 51.5 ns t f 38.5 ns t rr 195 248 300 ns q rr 2.5 3.5 4.5 m c m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c bv dss body diode reverse recovery charge i f =9a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =250v, i d =9a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =400v, i d =9a gate source charge gate drain charge v ds =5v i d =250 m a v ds =400v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =500v, v gs =0v id=250 a, vgs=0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =4.5a reverse transfer capacitance i f =9a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =4.5a forward transconductance a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =3.2a, v dd =150v, r g =25 ? , starting t j =25c www.freescale.net.cn 2/6 AOT9N50/aotf9n50 500v, 9a n-channel mosfet
typical electrical and thermal characteristics 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 3 6 9 12 15 18 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.0 0.5 1.0 1.5 2.0 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =4.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature bv dss (normalized) www.freescale.net.cn 3/6 AOT9N50/aotf9n50 500v, 9a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =400v i d =9a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for AOT9N50 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for aotf9n50 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 0 2 4 6 8 10 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) www.freescale.net.cn 4/6 AOT9N50/aotf9n50 500v, 9a n-channel mosfet
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal imp edance for AOT9N50 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.65c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 13: normalized maximum transient thermal imp edance for aotf9n50 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.25c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 5/6 AOT9N50/aotf9n50 500v, 9a n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 6/6 AOT9N50/aotf9n50 500v, 9a n-channel mosfet
|
